Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 °C

Abstract

In this letter, solution processed low voltage (<3 V) zinc oxide (ZnO) thin-film transistors with the maximum process temperature not exceeding 150 °C were achieved. In the devices, an ultra-thin zirconium oxide layer was formed as the gate dielectric via ultraviolet irradiation assisted sol-gel processes, and the ZnO channel was processed from an aqueous precursor of ammine-hydroxo zinc complex. The devices can be operated under a voltage of 3 V, and show decent device performance with the field effect mobility of 0.45 cm2/V · s and an ON/OFF current ratio of 105.