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The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers

Wide-bandgap SemiconductorPhotonicsElectrical EngineeringOptical MaterialsEngineeringPhysicsMultiple QuantumApplied PhysicsAluminum Gallium NitrideLow-mole Ingan StructureGan Power DeviceLayer SuperlatticesOptoelectronicsCompound Semiconductor