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Dielectric Properties of PLZT Epitaxial Thin Films
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1983
Year
Materials ScienceDielectric PropertiesElectrical EngineeringEpitaxial GrowthEngineeringFerroelectric ApplicationOptical PropertiesApplied PhysicsEpitaxial PlztThin FilmsX ≤28 CompositionMolecular Beam EpitaxyOptoelectronicsThin Film Processing
Epitaxial PLZT( x /0/100) thin films were successfully grown on c-plane sapphire substrates. Their dielectric and electrooptic properties were measured for the first time. The ferroelectricity was observed for the films of x ≤28 composition. The PLZT(28/0/100) thin film had strong electro-optic effect and this will be one of most useful candidates for making thin film integrated optic devices.