<i>In situ</i> measurement of increased ferroelectric/ferroelastic domain wall motion in declamped tetragonal lead zirconate titanate thin films

Abstract

Ferroelectric/ferroelastic domain reorientation was measured in a 1.9 μm thick tetragonal {001} oriented PbZr0.3Ti0.7O3 thin film doped with 1% Mn under different mechanical boundary constraints. Domain reorientation was quantified through the intensity changes in the 002/200 Bragg reflections as a function of applied electric field. To alter the degree of clamping, films were undercut from the underlying substrate by 0%, ∼25%, ∼50%, or ∼75% of the electrode area. As the amount of declamping from the substrate increased from 0% to ∼75%, the degree of ferroelectric/ferroelastic domain reorientation in the films increased more than six fold at three times the coercive field. In a film that was ∼75% released from the substrate, approximately 26% of 90° domains were reoriented under the maximum applied field; this value for domain reorientation compares favorably to bulk ceramics of similar compositions. An estimate for the upper limit of 90° domain reorientation in a fully released film under these conditions was determined to be 32%. It was also found that the different clamping conditions strongly influence the amount of reorientation upon removing the applied field, with higher remanence of preferred domain orientations observed in declamped films.