Surface recombination velocity of silicon wafers by photoluminescence

Abstract

Photoluminescence (PL) and optical reflection measurements, obtained in the two-wavelength SiPHER PL instrument, are used to determine the surface recombination velocity of silicon wafers. Local measurements and contour maps are possible allowing surface recombination maps to be displayed. This instrument also allows doping and trap density measurements. Surface recombination velocities from 10 to 106cm∕s can be measured on low or high resistivity polished and epitaxial wafers.