Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method

Abstract

In this work results of nitrogen doping in the amount of 0 vol.%, 3 vol.% and 10 vol.% on the growth of the 4H polytype on the 6H-SiC seed are presented. SiC crystals grown by PVT method on the (000-1) C-face of 6H seeds using the open seed backside design have been investigated. Structural and electrical properties of the crystals were studied by different experimental methods.