Schottky barriers of epitaxial NiSi2 on Si(111)

Abstract

We have investigated the Schottky-barrier heights of high-quality epitaxial type-A- and type-B-oriented NiSi2 on n-doped Si(111). Current-voltage and photoresponse techniques have been used. The barrier height of type-A NiSi2 is found to be low (0.64 eV), whereas type-B NiSi2 yields a high barrier of 0.76 eV. Ideality factors very close to unity (1.00–1.02) have been observed both for type-A NiSi2 as well as for type B.