High-performance, long-wave (∼10.2 <i>μ</i>m) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping

Abstract

A high-performance InGaAs/GaAs vertical quantum dot infrared photodetector (QDIP) with combined barrier of quaternary In0.21Al0.21Ga0.58As and GaAs was investigated in this study. A dominant long wavelength (∼10.2 μm) response was observed from the device. The device demonstrates large responsivity (2.16 A/W) with narrow spectral-width (Δλ/λ ∼0.14) and high detectivity (1.01 × 1011 cm Hz1/2/W at 0.3 V) at 10.2 μm at 77 K. In addition, the device has also produced a detectivity in the order of 6.4 × 1010 cm Hz1/2/W at 100 K at a bias of 0.2 V, indicating its suitability for high-temperature operations.