Driver-less 40 Gb/s LiNbO/sub 3/ modulator with sub-1 V drive voltage

Abstract

We have succeeded in reducing the drive voltage of a 40Gb/s LiNbO/sub 3/ modulator to 0.9 V, which is the lowest-drive-voltage 40Gb/s LiNbO/sub 3/ modulator in the world. The modulator can be driven within the break down voltage of a SiGe transistor. This result was achieved using a new design concept that featured a wide-gap, long CPW (coplanar waveguide) electrode.