Driver-less 40 Gb/s LiNbO/sub 3/ modulator with sub-1 V drive voltage

Masaru Sugiyama, Masaharu Doi, S. Taniguchi, T. Nakazawa, H. Onaka

2002 · 30 citations · 1 references

Concepts

Abstract

We have succeeded in reducing the drive voltage of a 40Gb/s LiNbO/sub 3/ modulator to 0.9 V, which is the lowest-drive-voltage 40Gb/s LiNbO/sub 3/ modulator in the world. The modulator can be driven within the break down voltage of a SiGe transistor. This result was achieved using a new design concept that featured a wide-gap, long CPW (coplanar waveguide) electrode.

References

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