Dielectric and infrared properties of TiO₂films containing anatase and rutile

Abstract

Electrical and optical properties of low-temperature, plasma enhanced chemical vapour deposited films of TiO2 have been studied; the source gases were TiCl4 and O2. The amorphous, as-deposited films had a dielectric constant ∼33 consistent with their measured density of 3.2 ± 0.2 g cm−3. Films deposited using a −41 V substrate bias contained the anatase phase and some rutile as evidenced from infrared spectroscopy and x-ray scattering. Annealing of these films at 600 °C resulted in a significant increase in the rutile content of the film.