The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices

Abstract

The charge trapping memory devices based on different HfO2/Al2O3 nanolaminated charge trapping layers were prepared and investigated. The memory device with 6 interfaces HfO2/Al2O3 shows a memory window of 4.7 V in its capacitance-voltage curve and a better retention property. It was suggested that the thermal treatment would reduce the defects inside the bulk HfO2, but cause an inter-diffusion at the interface HfO2/Al2O3, which could create additional defects at HfO2/Al2O3 interface. Increasing the number of the interfaces could enhance the charge trapping capability of the devices. The band alignments were established to explain the variation trend of the memory window and the retention characteristics of the memory devices with different laminated structures.