Hydrogenated microcrystalline silicon electrodes connected by indium phosphide nanowires

Abstract

The authors report the connection of two planar hydrogenated silicon (Si:H) electrodes by intersecting and bridging indium phosphide nanowires (InP NWs). A simple metal-semiconductor-metal photoconductor was used as a test vehicle to measure electrical and optical characteristics of the connected InP NWs. This implementation of III-V compound semiconductor nanowires on Si:H combines the characteristics of a direct bandgap semiconductor with the flexible fabrication processes of non-single-crystal silicon platforms that do not require single-crystal substrates.