Annealing of Te-implanted GaAs by ruby laser irradiation

Abstract

A single pulse of ruby laser radiation is shown to cause significant regrowth in the amorphous region of heavily ion-implanted GaAs. The implanted Te atoms and the host material both show good channeling dips, suggesting essentially complete substitutionality of the Te. There has been only a minor redistribution of the tellurium atoms. The resulting local Te concentration in the laser-irradiated sample is more than ten times the known maximum solubility of Te in GaAs.