Applied Physics Letters · 1978 · 80 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAmorphous Electronic MaterialsAmorphous SemiconductorsIon ImplantationRadiation Damage In MaterialsSemiconductor DefectsSemiconductor Device MaterialsAmorphous StructureAnnealing Temperature EffectsDefect Evolution Under IrradiationIon Implantation EffectsLaser AnnealingPost-implantation AnnealingRadiation-induced AmorphizationSolubility
A single pulse of ruby laser radiation is shown to cause significant regrowth in the amorphous region of heavily ion-implanted GaAs. The implanted Te atoms and the host material both show good channeling dips, suggesting essentially complete substitutionality of the Te. There has been only a minor redistribution of the tellurium atoms. The resulting local Te concentration in the laser-irradiated sample is more than ten times the known maximum solubility of Te in GaAs.
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Laser annealing of arsenic implanted silicon
J. Krynicki, J. Suski, S. Ugniewski et al. · Physics Letters A · 1977 · 51 citations
Tellurium implantation in GaAs
F. H. Eisen, B.M. Welch, Helmut Müller et al. · Solid-State Electronics · 1977 · 38 citations