Meyer–Neldel behavior of deep level parameters in heterojunctions to Cu(In,Ga)(S,Se)2

Abstract

Admittance spectroscopy was measured on Cu(In,Ga)(S,Se)2 thin film and single crystal heterojunctions. The emission rates of defects for various near-stoichiometric compositions follow a Meyer–Neldel rule, showing increasing attempt-to-escape frequencies with increasing defect depth. Defects in highly (In,Ga)-rich material showed lower attempt-to-escape frequencies and follow a separate Meyer–Neldel relation. Repetitive air annealing of a CuInSe2 heterojunction revealed a shift of the depth and capture cross section of an observed defect.