Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

Abstract

GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal-semiconductor-metal photoconductive detectors were fabricated using this material. The photocurrent properties of the detectors were measured and analysed. The spectrum response shows a high sensitivity in the wavelength region from 330 to 360nm, with a peak at 358nm and a sharp cutoff near 360nm. The maximum responsivities at 358nm were 700A/W (2V) and 7000A/W (30V). The relationship between responsivity and bias indicates that the responsivity increases linearly with bias until 30V. The influence of the spacing between two electrodes on the detector responsivity was also studied.