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Two-Dimensional Numerical Model and Turn-On Performance Simulation of Reversely Switched Dynistor
18
Citations
12
References
2013
Year
Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringCircuit DesignTurn-on Performance SimulationBase Structure ParametersTwo-dimensional Numerical ModelSwitched DynistorApplied PhysicsBias Temperature InstabilityComputer EngineeringTwo-dimensional Simulation ModelDigital Circuit DesignMicroelectronicsReversely Switched DynistorCircuit Simulation
In this paper, a two-dimensional simulation model of the reversely switched dynistor (RSD) has been introduced in detail. The model has been programmed in MATLAB/Simulink. Different base structures of the RSD are investigated through the model. The relationship between the maximum of turn-on voltage (U <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Fmax</sub> ) and the base structure parameters have been discussed. When the n-base doping concentration increases, the U <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Fmax</sub> gets a slow decrease at first and rapid increase around 1.0 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> . The U <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Fmax</sub> decreases when the n-base width or the p-base width decreases. Especially, a dramatic decrease of the U <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Fmax</sub> can be seen when the p-base width decreases to 70 μm. The experimental results of turn-on current and voltage waveforms have been compared with the simulation results to verify the model.
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