Publication | Closed Access
Asymmetric tilt interface induced by 60° misfit dislocation arrays in GaSb/GaAs(001)
33
Citations
11
References
1994
Year
EngineeringSevere Plastic DeformationSemiconductor DeviceSemiconductorsGasb IslandsMolecular Beam EpitaxyEpitaxial GrowthAnisotropic Elasticity ShowMaterials SciencePhysicsCrystalline DefectsSolid MechanicsDefect FormationMicrostructureMisfit Dislocation ArraysGasb FilmDislocation InteractionApplied PhysicsCondensed Matter Physics
Transmission electron microscopy of GaSb film grown on (001) GaAs revealed regular 60° misfit dislocation arrays in abnormally large and irregularly shaped GaSb islands. Having a same orientation of the Burgers vector, the 60° dislocations induce an asymmetric tilt interface. Calculations using anisotropic elasticity show that this interface has lower elastic energy than the symmetric interface relaxed by 60° dislocations of alternating orientations. When 60° dislocations are generated at the leading edge of growing islands, a particular orientation that assists the bending of atomic planes to the free surface of islands is preferred for a partial elastic relief of the misfit strain.
| Year | Citations | |
|---|---|---|
Page 1
Page 1