IEEE Journal of Quantum Electronics · 1983 · 224 citations · 23 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsDopingNonlinear Optical MaterialsNonlinear OpticsOptical Properties Of SemiconductorsSemiconductor HeterostructuresSemiconductor PhysicsCompositional GradingNonlinear Optical PropertiesNonlinear Optical ResponseQuantum Size Effects
Second-order optical nonlinearities associated with intra-subband transitions in Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> AS heterostructure exhibiting the quantum size effect are considered and shown to be large under conditions of degenerate doping and nonsymmetric compositional grading. Nonlinearities of between 10-100 times larger than in bulk GaAs seem feasible.
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