Increasing the effective barrier height of Schottky contacts to <i>n</i> –In _<i>x</i> Ga _{1− <i>x</i>} As

Abstract

In this letter it is shown that thin interfacial oxide layers may be used to increase the effective barrier height of Au/InP and Au/InGaAs Schottky barriers. These results confirm earlier studies on InP and extend the technique to InGaAs.