Publication | Open Access
Heterogeneously integrated long-wavelength VCSEL using silicon high contrast grating on an SOI substrate
77
Citations
26
References
2015
Year
Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsFiber OpticsSilicon On InsulatorWafer Scale ProcessingOptical PropertiesNovel Hcg-vcsel DesignPhotonic Integrated CircuitIntegrated Long-wavelength VcselNanophotonicsPlanar Waveguide SensorPhotonicsOptical InterconnectsWavelength ConversionSoi SubstratePhotonic DeviceElectro-optics DeviceHigh Contrast GratingApplied PhysicsVcsel ReflectorOptoelectronicsSilicon High Contrast
We report an electrically pumped hybrid cavity AlGaInAs-silicon long-wavelength VCSEL using a high contrast grating (HCG) reflector on a silicon-on-insulator (SOI) substrate. The VCSEL operates at silicon transparent wavelengths ~1.57 μm with >1 mW CW power outcoupled from the semiconductor DBR, and single-mode operation up to 65 °C. The thermal resistance of our device is measured to be 1.46 K/mW. We demonstrate >2.5 GHz 3-dB direct modulation bandwidth, and show error-free transmission over 2.5 km single mode fiber under 5 Gb/s direct modulation. We show a theoretical design of SOI-HCG serving both as a VCSEL reflector as well as waveguide coupler for an in-plane SOI waveguide, facilitating integration of VCSEL with in-plane silicon photonic circuits. The novel HCG-VCSEL design, which employs scalable flip-chip eutectic bonding, may enable low cost light sources for integrated optical links.
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