Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymeric Gate Dielectric on a Flexible Substrate

Abstract

Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a solution-processed polymeric gate dielectric of cross-linked poly(4-vinylphenol) (c-PVP) film were fabricated on a poly(ethylene terephthalate) (PET) substrate on which an a-IGZO film, as the active channel layer, was deposited by radio frequency (RF) sputtering. The entire TFT fabrication process was carried out at a temperature below 110 °C. The device exhibited an on/off ratio of 1.5×10 6 and a high field-effect mobility of 10.2 cm 2 V -1 s -1 , which is, to our knowledge, the best result ever achieved among a-IGZO TFTs with polymeric gate dielectrics on a plastic substrate.