EPR Study of the Hole Centers in Phenacite

Abstract

The centers created by x and uv irradiation of the single crystals of phenacite (Be2SiO4) at room temperature were studied by the EPR method. Well-documented proofs were offered that the centers involved ·SiO4−3 and ·PO3= radicals. The components of the g factor of the ·SiO4−3 radical are presented in the text. They fit this model well. Also supporting this model are the HFS splittings which were attributed to two Be atoms. The components of the g factor and the HFS tensors of the ·PO3= radical were measured. The HFS tensor fits this description of the center well. The paper following this one attempts to correlate these measurements with luminescence of phenacite.