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Plasma deposited hydrogenated carbon on GaAs and InP
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1985
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Materials ScienceSemiconductorsElectrical EngineeringDiamond-like CarbonEngineeringCarbon-based MaterialApplied PhysicsHydrogenated CarbonGlow Discharge 30Methane Flow RateKhz PlasmaChemistryThin FilmsGas Discharge PlasmaPlasma ProcessingChemical Vapor Deposition
The properties of ‘‘diamondlike’’ carbon films grown by glow discharge 30 kHz plasma using methane are reported. The C ls XPS line shape of films showed localized hybrid carbon bonds ranging from as low as 40% to as high as 97% percent of the total carbon bonds. Infrared spectroscopy and N15 nuclear reaction profiling data indicated 35% to 42% hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 °C on GaAs and InP. Optical data of the films showed band gap values of 2.0 to 2.4 eV increasing monotonically with methane flow rate.