Lattice-matched InGaAs on InP thermophovoltaic cells

Abstract

We report the fabrication and characterization of lattice matched single junction InGaAs thermophotovoltaic cells grown on InP substrates with an EQE >90% over a broad spectral range. The I–V characteristics of the cells are examined for a range of operating temperatures and illumination conditions. An accurate model of the cell performance, including the flat-spot behaviour exhibited by the cells, is developed using the commercial PC1D package. We use this model to estimate the output of these cells with an example low-cost spectral control system, which suggest that these cells would produce system efficiencies >10%, with the potential for efficiencies >20%.