Failure mechanism of THz GaAs photoconductive antenna

Abstract

We investigated the failure mechanism of THz GaAs photoconductive antenna using high resolution x-ray diffraction topography. From these studies, it was found that grain boundaries are formed during the high frequency device operation. This results in the segregation of gold at the boundaries causing electromigration of the metal between the gold micro-strips. This disrupts the photocurrents from being produced by femtosecond laser thus preventing terahertz beam generation from the photoconductive antennae leading to device failure.