Shape resonances above the Si 2<i>p</i> threshold in SiF4

Abstract

Using monochromatized synchrotron radiation and angle integrated photoelectron spectroscopy, the Si 2p, Si LVV Auger, and F 2s cross sections have been obtained for SiF4 molecules in the gas phase between 116 and 150 eV photon energies. These cross sections and the Si 2p β value have also been calculated using the MS-Xα method. There is qualitative agreement between theory and experiment. Together with recent experimental and theoretical Si 2p cross sections from SiCl4 and valence band cross sections on SiF4, the two major resonances at 5 and 22 eV kinetic energies are assigned as t2 resonances. The valence band branching ratios are not affected by interchannel coupling above the Si 2p threshold.