An AES and ELS study of InP (100) surface subjected to argon ion bombardment

Abstract

Abstract Auger electron spectroscopy (AES) and electron loss spectroscopy (ELS) have been performed in order to investigate a (100) InP surface subjected to argon ion bombardment at low energy. It has been found that preferential sputtering of phosphorus‐impurities species during the cleaning stage results in the formation of a In 0.57 P 0.43 disordered layer. Within the sampling depth of the In MNN Auger electrons, about 1/4 of the total In atoms are of metallic type. Our experimental results are not consistent with the formation of pure In islands over a stoichiometric InP surface. If In clusters are present in the disordered surface, they are associated with adsorbed phosphorus. Prolonged ion bombardment increases the surface roughness as detected by ELS and scanning electron microscopy (SEM).