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Size-induced lattice relaxation in CeO2 nanoparticles
360
Citations
9
References
2001
Year
EngineeringCrystal Growth TechnologyChemistryNanoscale ScienceMaterials EngineeringMaterials ScienceCrystalline DefectsCrystal MaterialNanotechnologyOxide ElectronicsDefect FormationNanocrystalline MaterialMicrostructureStrain-induced Line BroadeningCeo2 NanoparticlesNanomaterialsApplied PhysicsOxygen Vacancy ConcentrationSize-induced Lattice Relaxation
Size-induced lattice relaxation was observed for nanoscale CeO2 single crystals with an average size from 4 to 60 nm. Results showed the finest crystallites exhibited no strain-induced line broadening, while high temperature annealing resulted in larger grain sizes and significant strains. The observed shift in the x-ray diffraction lattice parameters was assumed to be due to the formation of defects on the lattice, specifically oxygen vacancies. Modeling revealed that the oxygen vacancy concentration ([VO••]) was found to be ≈4×1020/cm3 for the 4 nm crystallites, and decreased two orders of magnitude for larger 60 nm single crystals.
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