Publication | Open Access
Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands
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Citations
18
References
2011
Year
Optical Materialsμ M AperturesEngineeringOptical Transmission SystemLaser PhysicsLaser ApplicationsLaser MaterialSuper-intense LasersHigh-power LasersOptical AmplifierSecond Harmonic EmissionSemiconductor LasersOptical PropertiesFiber LaserNanophotonicsOptical PumpingPhotonicsElectrical Engineering1550-Nm WavebandsLaser DesignLaser ClassificationElectro-optics DeviceApplied PhysicsHigh-energy LasersOptoelectronicsLow Thermal Impedance
1300-nm, 1550-nm, and 1480-nm wavelength, optically pumped VECSELs based on wafer-fused InAlGaAs/InP-AlGaAs/GaAs gain mirrors with intracavity diamond heat spreaders are described. These devices demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with 5 groups of quantum wells shows CW output power of 2.7 W from 180 μ m apertures in both the 1300-nm and the 1550-nm bands. Devices with 3 groups of quantum wells emitting at 1480 nm and with the same aperture size show CW output of 4.8 W. These VECSELs emit a high-quality beam with beam parameter below 1.6 allowing reaching a coupling efficiency as high as 70% into a single-mode fiber. Maximum value of output power of 6.6 W was reached for 1300 nm wavelength devices with 290 μ m aperture size. Based on these VECSELs, second harmonic emission at 650 nm wavelength with a record output of 3 W and Raman fiber lasers with 0.5 W emission at 1600 nm have been demonstrated.
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