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Temperature dependence of the anomalous muonium hyperfine interaction and depolarization rate in silicon
17
Citations
9
References
1981
Year
Materials ScienceDepolarization RateEngineeringPhysicsOptical PropertiesIntrinsic ImpurityApplied PhysicsCondensed Matter PhysicsTemperature DependenceSilicon Host PhononsPhononSemiconductor MaterialDefect FormationRaman ProcessSilicon On InsulatorSilicon Debugging
The temperature dependence of the anomalous muonium hyperfine interaction has been measured in silicon between 5 and 150 K. The hyperfine parameters are observed to decrease with increasing temperature. This is argued to result from interaction of the anomalous muonium center with the silicon host phonons. Above 120 K a rapid increase of the depolarization rate of the anomalous muonium with temperature is observed; these data are consistent with a Raman process causing the increased depolarization.
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