Publication | Closed Access
Experimental Evidence for One Highly Dispersive Dangling-Bond Band on Si(111) 2 × 1
226
Citations
13
References
1982
Year
EngineeringSilicon On InsulatorElectronic StructureSemiconductorsElectronic DevicesQuantum MaterialsSiliceneMaterials SciencePhysicsCrystalline DefectsSemiconductor MaterialBuckling ModelSolid-state PhysicSymmetry LineExperimental EvidenceSurface ScienceApplied PhysicsCondensed Matter PhysicsAngle-resolved Photoemission Data
Angle-resolved photoemission data along the $\overline{\ensuremath{\Gamma}}\ensuremath{-}\overline{J}$ symmetry line in the surface Brillouin zone of the Si(111) 2 \ifmmode\times\else\texttimes\fi{} 1 surface show that there exists only one dangling-bond band. This fact removes the experimental basis for the introduction of electron correlation effects for the Si(111) 2 \ifmmode\times\else\texttimes\fi{} 1 surface. The dangling-bond band shows a large positive energy dispersion, which favors the recently suggested $\ensuremath{\pi}$-bonded chain model instead of the widely considered buckling model.
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