Effect of GaAsyP1−y(0⩽y<1) interlayers on the structural, optical, and electrical characteristics of GaAs/InGaP heterojunction

Abstract

The effect of GaAsyP1−y(0⩽y<1) interlayers on the characteristics of GaAs/InGaP heterojunction has been investigated. For samples having GaAsyP1−y interlayers in the range of 0<y⩽0.75 inserted in the GaAs-on-InGaP interface, sharp GaAs band-edge emissions are recovered. These results are attributed to smoothly grown InGaAs(P) interfacial layers with the band-gap energy higher than that of GaAs through transmission electron microscopy measurements. In addition, the amount of carrier depletion at the GaAs-on-InGaP interface is smaller with the use of GaAsyP1−y interlayers than that for no interlayer in capacitance–voltage measurements.