InGaSbAs injection lasers

Abstract

Double heterojunction structures of InGaSbAs/GaAl-SbAs emitting at 300 K in the wide wavelength range of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1.8-2.4 \mu</tex> m have been prepared by the LPE technique on gallium antimonide