Publication | Closed Access
Investigation of ZnS Passivated InP Nanocrystals by XPS
83
Citations
19
References
2001
Year
Materials ScienceSemiconductorsIi-vi SemiconductorNanoscale ScienceEngineeringElectron Escape DepthNanomaterialsNanotechnologyOxide ElectronicsElectron SpectroscopyApplied PhysicsSemiconductor NanostructuresInp NanoparticlesChemistrySolar Cell MaterialsNanocrystalline MaterialComputer SimulationNanophysics
ZnS passivated InP nanoparticles prepared by the TOP/TOPO method have been investigated by photoelectron spectroscopy with tunable synchrotron radiation. Based on the energy dependence of the electron escape depth, we present a method to characterize the core−shell nature of the sample structure. Energy tuning indicates that In is confined to the core of the particles while Zn is located in a surrounding shell. Computer simulation allows us to quantify these results and to extract average layer thicknesses.
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