GaInAs/InP large bandwidth (> 2 GHz) PIN detectors

Abstract

Ga0.47In0.53As/InP heterophotodiodes are demonstrated with a bandwidth greater than 2 GHz, less than 0.5 pF capacitance, and subnanoampere dark current at the operating bias. These photodiodes satisfy criteria for both low noise and high speed in the 1 MHz–2 GHz bit-rate range for optical fibre telecommunications