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Two-wavelength absorption modulation spectroscopy of bandtail absorption in GaAs quantum wells
36
Citations
14
References
1986
Year
Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringOptoelectronic DevicesUrbach EnergySemiconductorsIi-vi SemiconductorOptical PropertiesQuantum MaterialsExciton AbsorptionCompound SemiconductorAbsorption CoefficientPhotonicsPhotoluminescencePhysicsOptoelectronic MaterialsGaas Quantum WellsBandtail AbsorptionApplied PhysicsQuantum Photonic DeviceOptoelectronics
We have discovered that below-band-gap photoexcitation produces large bleaching of the exciton absorption in GaAs quantum well heterostructures. We have used this effect to perform the first investigation of room-temperature bandtail absorption in these structures. We find that the below-band-gap absorption follows a spectral Urbach’s rule. In addition, proton-bombarded samples show an Urbach energy correlated with bombardment-induced defects. This sensitive technique has enabled us to study samples as thin as 1 μm at energies where the absorption coefficient is ∼10 cm−1.
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