First investigation of a novel 2D position-sensitive semiconductor detector concept

Abstract

This paper presents a first study of the performance of a novel 2D\nposition-sensitive microstrip detector, where the resistive charge division\nmethod was implemented by replacing the metallic electrodes with resistive\nelectrodes made of polycrystalline silicon. A characterization of two\nproof-of-concept prototypes with different values of the electrode resistivity\nwas carried out using a pulsed Near Infra-Red laser. The experimental data were\ncompared with the electrical simulation of the sensor equivalent circuit\ncoupled to simple electronics readout circuits. The good agreement between\nexperimental and simulation results establishes the soundness of resistive\ncharge division method in silicon microstrip sensors and validates the\ndeveloped simulation as a tool for the optimization of future sensor\nprototypes. Spatial resolution in the strip length direction depends on the\nionizing event position. The average value obtained from the protype analysis\nis close to 1.2% of the strip length for a 6 MIP signal.\n