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Secondary breakdown and hot spots in power transistors
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1963
Year
Electrical EngineeringEngineeringMeasurementBias Temperature InstabilityTime-dependent Dielectric BreakdownComputer EngineeringSecondary BreakdownSummary FormNew YorkPower ElectronicsSignal ProcessingIeee International Convention
Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is presented.