Applied Physics Letters · 2007 · 18 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceNanomaterialsNanotechnologyPhotonicsNear-field RegionsOptical ImagingPhotonic Device SimulationSemiconductor LasersFull Width At Half MaximumNanophotonic Device SimulationNear-field OpticsOptical Data StorageVertical-cavity Surface-emitting Lasers
The authors designed and demonstrated a C-shaped nanoaperture (C aperture) vertical-cavity surface-emitting laser (VCSEL) with a maximum far-field power of 157μW coming from a 70nm C aperture. Simulation shows that the near-field full width at half maximum spot size at 30nm away from the C aperture is 94×108nm2 in X and Y directions. The authors estimate the peak near-field intensity from the C-aperture VCSEL to be as high as 19mW∕μm2. This high intensity and small spot size are promising for realizing near-field applications such as near-field imaging and ultradense near-field optical data storage.
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