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Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices
26
Citations
7
References
1987
Year
Materials ScienceIi-vi SemiconductorElectrical EngineeringPhotoluminescenceEngineeringTransition Metal ChalcogenidesPhysicsNanoelectronicsApplied PhysicsQuantum MaterialsCondensed Matter PhysicsModerate Electric FieldsExciton Ionization ThresholdExciton LuminescenceOptoelectronicsCompound Semiconductor
Application of moderate electric fields to ZnSe/(Zn,Mn)Se quantum wells yields distinct spectral shifts of the recombining exciton luminescence. This shows that confinement effects in this heterostructure are sufficient to increase the exciton ionization threshold. At high applied fields and low temperatures, injection of hot electrons from the n+GaAs/ZnSe heterojunction at our substrate/buffer layer excites yellow luminescence from internal transitions of the Mn ion in (Zn,Mn)Se layers.
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