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Spin-dependent inelastic transport through single-molecule junctions with ferromagnetic electrodes
55
Citations
35
References
2007
Year
EngineeringMagnetic ResonanceSpin DynamicMagnetoresistanceMagnetismTunneling MicroscopyNanoelectronicsSpin-dependent Inelastic TransportCharge Carrier TransportQuantum ScienceElectrical EngineeringPhysicsMolecular Quantum DotQuantum MagnetismSpintronicsNatural SciencesZero-bias Tmr DipApplied PhysicsCondensed Matter Physics
Using the nonequilibrium Green's function approach and taking into account contributions of both electron and hole, we investigate the spin-dependent carrier transport in a magnetic tunnel junction consisting of a molecular quantum dot coupled to two ferromagnetic leads and to a local vibrational mode. The calculated results show a remarkable influence of electron-phonon interaction and electron-electron interaction on spin-dependent density of states, charge current, and tunneling magnetoresistance (TMR). The oscillating TMR is attributed to the phonon-assisted resonant tunneling rather than the well-known charging effect. The behavior of the zero-bias TMR dip or peak depends to a great degree on whether the quantum dot is in the Kondo or non-Kondo regime.
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