High-performance LWIR 256 x 256 HgCdTe focal plane array operating at 88 K

Abstract

A 256 by 256 IRCMOS array with a 35 micron pitch operating at 88 K and above 10 microns has been developed at LETI/LIR. High performances have been obtained owing on one hand to a reduced dark current detector technology and on the other hand to a new readout circuit architecture which maximizes both charge handling capacity and responsivity. We have measured a NEDT of 13 mK at 88 K for a cutoff wavelength of 10.1 micrometer. A description of the array is given and the main electro-optical characteristics of the component are presented.