Electronic contribution to friction on GaAs: An atomic force microscope study

Abstract

The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50 nm radius in an atomic force microscope sliding against an $n$-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.