Carrier-phonon interaction in small cross-sectional silicon nanowires

Abstract

Using first-order perturbation theory and deformation potential approximation, the interaction of electrons and holes with acoustic and optical phonons is investigated in silicon nanowires (SiNWs) with different diameters and crystallographic axis orientations. The electronic band structures for [110] and [100] SiNWs are obtained from a sp3d5s∗ tight-binding scheme, while a continuum model is assumed for phonon dispersion. The influence of confined and bulk phonons on carrier transport is investigated.