Matrix and quantum confinement effects on optical and thermal properties of Ge quantum dots

Abstract

Abstract The influence of SiO 2 and Si 3 N 4 dielectric matrices on the structural, phonon, luminescence and thermal properties of Ge quantum dots (QDs) has been experimentally investigated. Compared with the case of QDs in SiO 2 layers, Si 3 N 4 matrix imposes large interfacial surface energy on QDs and enhances their Ostwald ripening rate, appearing to be conducive for an improvement in crystallinity and a morphology change to a more perfectly spherical shape of Ge QDs. Quantum confinement induced electronic structure modulation for Ge QDs is observed to be strongly influenced not only by the QD size but also by the embedded matrix. Both matrix and surface effects offer additional mechanisms to QD itself for controlling the optical and thermal properties of the QDs.