Applied Physics Letters · 2001 · 126 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesOptoelectronic DevicesQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsBlue Light-emitting DiodesGallium NitrideGallium Nitride Light-emitting DiodesGreen Light-emitting DiodesLight-emitting DevicesQuantum Well Light-emitting DiodesQuantum Well StructuresTerminal Device Design
We have designed and implemented a monolithic, dual-wavelength blue/green light emitting diode (LED) consisting of two active indium gallium nitride/gallium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p++/n++ InGaN/GaN tunnel junction is inserted between the LEDs, emitting in this proof-of-concept device at 470 nm and 535 nm, respectively. The device has been operated as a three-terminal device with independent electrical control of each LEDs to a nanosecond time scale.
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GaN-Based Light Emitting Diodes with Tunnel Junctions
Tetsuya Takeuchi, G. Hasnain, S. Corzine et al. · Japanese Journal of Applied Physics · 2001 · 101 citations
Engineering, Electrical Engineering, Materials Engineering +16
Resonant-cavity InGaN quantum-well blue light-emitting diodes
Yoon‐Kyu Song, M. Diagne, Hao Zhou et al. · Applied Physics Letters · 2000 · 93 citations