Field-induced modulations of refractive index and absorption coefficient in a GaAs/AlGaAs quantum well structure

Abstract

Dispersions of field-induced variations in refractive index and absorption coefficient of a GaAs/AlGaAs quantum well structure are obtained with electroreflectance and transmission measurements at room temperature. The result indicates a possibility of an electroabsorption modulator without frequency chirping, operating at a particular wavelength near an excitonic gap.