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Optical centres related to nitrogen, vacancies and interstitials in polycrystalline diamond films grown by plasma-assisted chemical vapour deposition
83
Citations
9
References
1989
Year
Optical MaterialsPoint DefectsEngineeringCrystal Growth TechnologyVacuum DeviceChemistryLuminescence PropertySpectroscopic PropertyOptical CentresOptical PropertiesZero-phonon LinesMaterials SciencePhotoluminescenceNanotechnologyPlasma-assisted Chemical VapourPolycrystalline Diamond FilmsOptical CeramicDiamond-like CarbonApplied PhysicsDiamond FilmsOptoelectronicsChemical Vapor Deposition
The authors have used cathodoluminescence spectroscopy to examine point defects present in polycrystalline diamond films grown by the decomposition of a methane-hydrogen mixture in a microwave plasma. For films grown with low methane concentrations (0.3%) the bright-blue luminescence is predominantly due to donor-accepted pair recombination, together with some weak zero-phonon lines. As the CH4 concentration in the gas mixture is increased the cathodoluminescence spectra from the resulting films contain a number of additional zero-phonon lines. Some of these are unique to this type of diamond; other lines at 2.156 eV, 2.807 eV, 3.188 eV and 4.582 eV are associated with optical centres that have been studied in diamonds produced by high-pressure synthesis, and indicate that the diamond films contain carbon interstitials, nitrogen-vacancy and nitrogen-interstitial centres. The widths of the zero-phonon lines in the diamond films suggest that the material is heavily strained.
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