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Photoelectrical properties, energy level spectra, and photogeneration mechanisms of pentacene
46
Citations
17
References
1974
Year
Pc CrystalsOptical MaterialsEngineeringExcitation Energy TransferEv Spectral RegionOptoelectronic DevicesChemistryElectronic Excited StateSemiconductorsElectronic DevicesOptical PropertiesPhotophysical PropertyPhotochemistryPhysicsOptoelectronic MaterialsPhotonic MaterialsOrganic SemiconductorPhotoelectric MeasurementPhotochromismOptoelectronicsElectronic MaterialsNatural SciencesApplied PhysicsPc CrystalPhotoelectrical PropertiesSolar Cell Materials
The main optical, dark and photoconductivity, photo-emf, and photoemission characteristics are studied for thin-layers of pentacene (Pc) crystals. It is shown that in the h = = 2.2 to 4.0 eV spectral region intrinsic photogeneration is dominant in Pc crystals, presumably proceeding via an autoionization mechanisms with a threshold value Ec = = (2.20 ± 0.05) eV. Whereas in the hvv = 1.4 to 2.2 eV spectral region an exciton photogeneration mechanism, namely, generation of excess charge carriers through triplet exciton-trapped hole interaction, seems most probably. The energy level spectra of neutral and ionized states of the Pc crystal are determined. The Pc crystal ionization energy Ic equals to (5.07 ± 0.05) eV; the forbidden energy gap ΔE0 = (2.20 ± 0.05) eV; the intrinsic dark conductivity activation energy E = ΔE0/2 = (1.15 ± 0.15) eV. The electron affinity Ac of the Pc crystal, determined by three independent methods equals to (2.87 ± 0.10) eV, (2.70 ± 0.15) eV, or (2.73 ± 0.2) eV, respectively. The characteristic energies of the quasi-continuous trap distribution for vacuum evaporated thin Pc crystals layers are kTc = 0.12 eV in an exponential approximation and ± = 0.28 eV in a Gaussian one as determined from SCLC measurements. [Russian Text Ignored].
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