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GaAs: Si LED Pumped Yb-Doped YAG Laser

82

Citations

1

References

1971

Year

Abstract

A GaAs: Si light-emitting-diode (LED) pumped 1.03-μm laser employing a YAG: Yb laser rod has been constructed with the rod and LED's cooled at ∼80 K. Pulsed operation with a peak laser power of 0.7 W is observed.

References

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